1 - 7 package: isoplus-dil? ? high level of integration ? rohs compliant ? terminals for soldering or welding connections ? space and weight savings ? high reliability ? low thermal impedance part number MTI200WX75GD applications: ac drives ? in automobiles - electric power steering - starter generator ? in industrial vehicles - propulsion drives - fork lift drives ? battery supplied equipment ? dc-dc converter features / advantages: ? mosfets in trench technology: - low r dson - optimized intrinsic reverse diode ? package: - high level of integration - high current capability - aux. terminals for mosfet gate control - terminals for soldering or welding connections - isolated dcb ceramic base plate with optimized heat transfer ? space and weight savings ? high current capability v dss = 75 v i d25 = 255 a r dson typ. = 1.1 m w three phase full bridge with trench mosfets in dcb isolated high current package s2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l3+ l2 l1 l1+ l2+ l3- l1- l2- t1 t3 t5 t2 t4 t6 terms & conditions of usage the data contained in this product data sheet is exclusively intended for technically trained staff. the user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. the specifcations of our components may not be considered as an assurance of component characteristics. the information in the valid application- and assembly notes must be considered. should you require product information in excess of the data given in this product data sheet or which concerns the specifc application of your product, please contact your local sales offce. due to technical requirements our product may contain dangerous substances. for information on the types in question please contact your local sales offce. should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. surface mount device ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
2 - 7 mosfets ratings symbol defnitions conditions min. typ. max. unit v dss drain source breakdown voltage t vj = 25c to 150c 75 v v gs v gsm max. dc gate source voltage max. transient gate source voltage 15 20 v v i d25 i d90 continuous drain current (die capability) t c = 25c t c = 90c 255 190 a a r ds(on) 1) static drain source on resistance on chip level at t vj = 25c i d = 100 a; v gs = 10 v t vj = 125c 1.1 1.8 1.3 m w m w v gs(th) gate threshold voltage i d = 275 a; v ds = v gs t vj = 25c 2.3 3.1 3.8 v i dss drain source leakage current v ds = v dss ; v gs = 0 v t vj = 25c t vj = 125c 10 1 100 a a i gss gate source leakage current v gs = 20 v; v ds = 0 v 500 na r g gate resistance on chip 2.7 w c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v gs = 0 v; v ds = 38 v; f = 1 mhz 10.8 2.42 110 14.4 3.22 - nf nf pf q g q gs q gd total gate charge gate source charge gate drain (miller) charge v gs = 10 v; v ds = 38 v; i d = 100 a 155 53 32 nc nc nc t d(on) t r t d(off) t f e on e off e rec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse turn-off reverse recovery losses inductive load t vj = 125c v gs = 10 v; v ds = 30 v i d = 100 a; r g = 27 w 145 70 520 55 80 350 8 ns ns ns ns j j j r thjc thermal resistance junction to case 0.85 k/w r thjh thermal resistance junction to heatsink with heat transfer paste (ixys test setup) 1.1 1.4 k/w 1) v ds = i d (r ds(on) + 2 r pin to chip ) source-drain diode i f25 i f90 forward current (body diode) v gs = 0 v t c = 25c t c = 90c 175 100 a a v sd source drain voltage i f = 100 a; v gs = 0 v t vj = 25c 0.9 1.2 v q rm i rm t rr reverse recovery charge max. reverse recovery current reverse recovery time v r = 30 v; i f = 100 a t vj = 125c r g = 27 w 730 27 42 nc a ns ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
3 - 7 part number m = mosfet t = trench i = infneon trench 200 = current rating [a] wx = 6-pack with separated phase legs 75 = reverse voltage [v] gd = isoplus-dil ordering part name marking on product delivering mode base qty ordering code standard MTI200WX75GD-smd MTI200WX75GD tube 13 516955 xxxxxxxxxxxx yywwc dcb backside yyyyy y date code assembly line t ype number assembly code package isoplus-dil? ratings symbol defnitions conditions min. typ. max. unit i rms rms current per pin in main current paths (l1+...l3+, l1-...l3-, l1...l3) may be additionally limited by external connections (pcb tracks) 2 pins for output l1, l2, l3 75 a t stg storage temperature -55 125 c t op operation temperature -55 150 c t vj virtual junction temperature -55 175 c weight 13 g f c mounting force with clip 50 250 n v isol isolation voltage t = 1 second 50/60 hz, rms, i isol < 1 ma 1200 v t = 1 minute 1000 v r pin-chip resistance terminal to chip v ds = i d (r ds(on) + 2 r pin to chip ) 0.5 m w c p coupling capacity between shorted pins and back side metallization 160 pf ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
4 - 7 outlines isoplus-dil? s2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l3+ l2 l1 l1+ l2+ l3- l1- l2- t1 t3 t5 t2 t4 t6 ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
5 - 7 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 01234 0 100 200 300 400 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 100 200 300 400 5.5 v -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 6.5 6 v 0 100 200 300 400 0 1 2 3 4 5 5 v 5.5 v 5 v 6.5 v r ds(on) 5.5 v 5 v 6 v 6.5 v t j = 125c 6 v t j [c] v dss norm. [v] fig.1 drain source breakdown voltage v dss vs. junction temperature t vj v gs [v] i d [a] fig. 2 typ. transfer characteristics v ds [v] i d [a] fig. 3 typ. output characteristics on die level i d [a] v ds [v] fig. 4 typ. output characteristics on die level r ds(on) norm. t j [c] fig.5 drain source on-state resistance r ds (on) vs. junction temperature t vj , on die level r ds(on) normalized i d [a] fig. 6 drain source on-state resistance r ds(on) versus i d , on die level r ds(on) norm. r ds(on) [m ] v gs = 10 v i d = 38 a i dss = 1 ma v g s = 20 v 15 v 10 v 7 v v gs = 20 v 15 v 10 v 7 v t vj = 125c t vj = 25c t vj = 25c t vj = 125c 7 v 10 v 15 v 20 v ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
6 - 7 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 40 80 120 160 200 0 20 40 60 80 100 120 0 40 80 120 160 200 240 0 40 80 120 160 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 100 0.0 0.1 0.2 0.3 0.4 0.5 0 100 200 300 400 500 20 40 60 80 100 0.0 0.4 0.8 1.2 1.6 0 400 800 1200 1600 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 300 q g [nc] v gs [v] fig.7 typical turn on gate charge fig. 8 drain current i d vs. case temperature t c (chip capability) e on [ j] i d [a] t [ns] fig. 9 typ. turn-on energy and switching times versus drain current, inductive switching t r e on t d(on) e off t f t d(off) e off [mj] i d [a] t [ns] fig. 10 typ. turn-off energy and switching times versus drain-current, inductive switching t r e on t d(on) e on [mj] t [ns] r g [ ] fig. 11 typ. turn-on energy and switching times versus gate resistor, inductive switching r g [ ] e off t d(off) t f t [ns] e off [mj] fig. 12 typ. turn-off energy and switching times versus gate resistor, inductive switching t c [c] i d [a] e rec(off) v ds = 30 v v gs = 0/10 v r g = 27 t vj = 125c e rec(off) x10 i d = 100 a t vj = 25c v ds = 20 v v ds = 40 v v ds = 30 v v gs = 10/0 v r g = 27 t vj = 125c v ds = 30 v v gs = 0/10 v i d = 100 a t vj = 125c v ds = 30 v v gs = 0/10 v i d = 100 a t vj = 125c ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
7 - 7 400 600 800 1000 1200 0.2 0.3 0.4 0.5 0.6 0.7 0.8 400 600 800 1000 1200 0 10 20 30 40 50 0 10 20 30 40 50 0.5 0.6 0.7 0.8 0.9 1.0 100 200 300 400 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rm [a] t rr [ns] di/dt [a/ s] fig. 13 typ. reverse re covery characteristics 150 82 150 27 27 82 i rm t rr q rr [n c] fig. 1 4 typ. reverse recovery characteristics v sd [v] i s [a] fig.15 source current i s vs. source drain voltage v sd (body diode) on die level t [ms] z thjh [k/w] fig. 16 typ. thermal impedance junction to heatsink z thjh with heat transfer paste (ixys test setup) i f = 100a v ds = 30 v t vj = 125c di/dt [a/ s] i f = 100 a v r = 30 v t vj = 125c 150 27 82 t vj = -25c 25c 125c 150c ? 2017 ixys all rights reserved 20170614g MTI200WX75GD ixys reserves the right to change limits, test conditions and dimensions.
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